Abstract.
Measurements of field emission current-voltage and Fowler-Nordheim
characteristics of Si tips covered by 100 nm-thick CaF2 epitaxial
layers have been for the first time performed. It was found that in
spite of dielectric nature of the coating, the tips demonstrate high
emissivity comparable with the diamond coated tips. Results of high
resolution photoassisted field emission investigations of CaF2/Si
structures are presented.